Buffered h-bridge

The circuit, shown in Figure 1, is an H-bridge composed of highpower switching MOSFETs that are controlled by low voltagelogic signals. The circuit provides a convenient interfacebetween logic signals and the high power bridge. The bridgeuses low cost N-channel power MOSFETs for both the high andlow sides of the H-bridge. The circuit also provides

The Si9986 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1.0 A at V DD = 12 V (room temperature) at switching rates up to 200 kHz. Buffered H-Bridge - Northwestern University The Si9986 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1.0 A at V DD = 12 V (room temperature) at switching rates up to 200 kHz. Si9986 Buffered H-Bridge - Vishay Intertechnology Si9986 Buffered H-Bridge The Si9986 is a buffered H-bridge that will eliminate all the external discretes that are normally needed to prevent shoot-through in low-voltage brushed motor, stepper motor, and actuator applications. Key features include the following: The output FETs are complementary, thus requiring no high-side drive power supply. Si9986 Buffered H-Bridge | Vishay Si9986 Buffered H-Bridge, available from Vishay Intertechnology, a global manufacturer of electronic components.

The ultimate goal is the H-Bridge shown as hb_big1.jpg Permanent magnet DC motors have been around for many years and come in a variety of sizes and voltages. Their direction of rotation is dependant upon the polarity of the applied voltage.

SI9987DY Datasheet(PDF) - Vishay Siliconix

H-Bridge MOSFETs. Diodes Incorporated’s’ line of MOSFET H-Bridges optimize the design of DC motor control and inverter circuits. With a simplified design, one Diodes MOSFET H-Bridge can replace two dual SO’s, reducing: PCB area footprint by 50%, component count and PCB area, and overall cost.

Buffered H-Bridge - Farnell element14 The Si9986 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1.0 A at VDD = 12 V (room temperature) at switching rates up to 200 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on simultaneously. Unique input codes allow both CN0196 Circuit Note | Analog Devices The circuit, shown in Figure 1, is an H-bridge composed of highpower switching MOSFETs that are controlled by low voltagelogic signals. The circuit provides a convenient interfacebetween logic signals and the high power bridge. The bridgeuses low cost N-channel power MOSFETs for both the high andlow sides of the H-bridge. The circuit also provides ZXMHC10A07N8 - Diodes Incorporated 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A= 25°C N-CH 100V 2.9nC 0.70Ω @ V GS= 10V 1.0A 0.90Ω @ V GS= 6.0V 0.9A P-CH -100V 3.5nC 1.00Ω @ V GS= -10V -0.9A 1.45Ω @ V GS= -6.0V -0.7A Description This new generation complementary MOSFET H-Bridge